| 发明名称 |
Semiconductor device with asymmetric pocket implants |
| 摘要 |
A semiconductor device ( 1 ) has a source ( 2 ) a gate ( 3 ) and a drain ( 4 ), a single deep-pocket ion implant ( 8 ) in a source-drain depletion region, and a single shallow-pocket ion implant ( 9 ) in the source-drain depletion region.
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| 申请公布号 |
US7253062(B2) |
申请公布日期 |
2007.08.07 |
| 申请号 |
US20050245377 |
申请日期 |
2005.10.06 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG YIN-PIN;CHANG CHIN-SHENG |
| 分类号 |
H01L21/336;H01L21/265;H01L21/28;H01L21/425;H01L29/08;H01L29/423;H01L29/76;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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