发明名称 |
Dual SOI film thickness for body resistance control |
摘要 |
The silicon-on-insulator (SOI) arrangement provides dual SOI film thicknesses for body-resistance control and provides a bulk silicon substrate on which a buried oxide (BOX) layer is provided. The BOX layer has recesses formed therein and unrecessed portions. The silicon layer is formed on the BOX layer and closes the recesses and covers the unrecessed portions of the BOX layer. Shallow trench isolation regions define and isolate first silicon regions from second silicon regions that each include one of the recesses. Floating-body devices are formed within the first silicon regions, which exhibit a first thickness, and body-tied devices are formed within the second silicon regions that include the thicker silicon of the recesses.
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申请公布号 |
US7253068(B1) |
申请公布日期 |
2007.08.07 |
申请号 |
US20040834095 |
申请日期 |
2004.04.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
JU DONG-HYUK;KRISHNAN SRINATH;PELELLA MARIO |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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地址 |
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