发明名称 Semiconductor device and method for manufacturing the same
摘要 It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate electrode and source and drain interconnections in the same process, forming a first insulating film covering the interconnections, forming an upper light-shielding film on the first insulating film, forming a second insulating film on the upper light-shielding film, partially etching the first and second insulating films to form a contact hole reaching the drain interconnection, and forming a pixel electrode on the second insulating film to connect to the drain interconnection. Meanwhile, a holding capacitance is formed by the upper light-shielding film, the second insulating film and the pixel electrode.
申请公布号 US7253038(B2) 申请公布日期 2007.08.07
申请号 US20060455950 申请日期 2006.06.20
申请人 发明人
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址