发明名称 Multi-port memory device
摘要 A multi-port memory device improves efficiency of a global data drive by controlling the global data bus to transmit data in a predetermined range. The multi-port memory device includes a global data bus; transmitters and receivers; a termination unit for controlling the global data bus to transmit the data in a range between a first voltage and a second voltage in response to an active mode signal; and a voltage generator for generating the first and the second voltages. The first voltage is higher than a ground voltage and the second voltage is lower than a power supply voltage.
申请公布号 US7254087(B2) 申请公布日期 2007.08.07
申请号 US20050322789 申请日期 2005.12.29
申请人 HYNIX SEMICONDUCTORS, INC. 发明人 KIM KYUNG-WHAN;LEE JAE-JIN
分类号 G11C8/00 主分类号 G11C8/00
代理机构 代理人
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