发明名称 CHAMBER PREVENTING DEPOSITION OF MATERIAL FILM ON WAFER HEATER
摘要 A chamber is provided to improve the performance of a wafer heater and to restrain the increase of costs due to the replacement of the wafer heater by preventing a material layer from being deposited on an outer heater of the wafer heater using an improved connection structure between the outer heater and a guide ring. A chamber includes a wafer heater and a guide ring. The wafer heater(100) heats a wafer and is composed of an inner heater(120) and an outer heater(140). The guide ring(200a) encloses the outer heater. A free-gap structure is formed between the outer heater and the guide ring, so that a material layer is prevented from being deposited on the outer heater. The material layer is made of WSix.
申请公布号 KR20070079405(A) 申请公布日期 2007.08.07
申请号 KR20060010039 申请日期 2006.02.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HAK YOUNG
分类号 H01L21/20 主分类号 H01L21/20
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