| 摘要 |
An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L 1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L 1 , a diluting liquid L 2 for the etchant liquid L 1 is discharged at a thin portion of the film for processing.
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