| 摘要 |
We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick Ta<SUB>N </SUB>seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the Ta<SUB>N </SUB>seed layer. Further, the Ta<SUB>N </SUB>seed layer exhibits low resistivity, in the range of 30 muOmegacm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the Ta<SUB>N </SUB>seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the Ta<SUB>N </SUB>seed layer.
|
