发明名称 |
Semiconductor device edge termination structure |
摘要 |
In one embodiment, an edge termination structure is formed in a semiconductor layer of a first conductivity type. The termination structure includes an isolation trench and a conductive layer in contact with the semiconductor layer. The semiconductor layer is formed over a semiconductor substrate of a second conductivity type. In a further embodiment, the isolation trench includes a plurality of shapes that comprise portions of the semiconductor layer.
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申请公布号 |
US7253477(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20050057138 |
申请日期 |
2005.02.15 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. |
发明人 |
LOECHELT GARY H.;ZDEBEL PETER J.;GRIVNA GORDON M. |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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