| 摘要 |
In a complete depletion type SOI transistor, the roll-off of a threshold value is suppressed, independently from the formation of an SOI film to be thinner. As for a semiconductor device ( 1 ), the impurity concentration in a channel formation portion ( 10 ) is implanted not uniformly along the length direction of a gate ( 2 ) in the complete depletion type silicon on insulation (SOI) transistor. In other words, high concentration regions ( 11 ) where impurity concentrations are higher than that at a central portion in the end parts of the channel formation portion ( 10 ) on the side of a source ( 4 ) and a drain ( 5 ).
|
