| 发明名称 |
Diode structure and integral power switching arrangement |
| 摘要 |
A diode structure having high ESD stability is described. Other embodiments provide an integral power switching arrangement having an integrated low leakage diode.
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| 申请公布号 |
US7253456(B2) |
申请公布日期 |
2007.08.07 |
| 申请号 |
US20040976436 |
申请日期 |
2004.10.29 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
JENSEN NILS |
| 分类号 |
H01L29/739;H01L21/76;H01L23/58;H01L23/62;H01L27/02;H01L27/082;H01L29/06;H01L29/861 |
主分类号 |
H01L29/739 |
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