发明名称 |
CONTOURED-TUB FERMI-THRESHOLD FIELD EFFECT TRANSISTOR AND METHOD OF FORMING SAME |
摘要 |
A Fermi-threshold field effect transistor includes a contoured-tub region of the same conductivity type as the source, drain and channel regions and having nonuniform tub depth. The contoured-tub is preferably deeper under the source and/or drain regions than under the channel region. Thus, the tub-substrate junction is deeper under the source and/or drain regions than under the channel region. The diffusion capacitance is thereby reduced compared to a tub having a uniform tub depth, so that a high saturation current is produced at low voltages. The contoured-tub may be formed by an additional implant into the substrate using the gate as a mask.
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申请公布号 |
CA2206346(C) |
申请公布日期 |
2007.08.07 |
申请号 |
CA19952206346 |
申请日期 |
1995.12.05 |
申请人 |
THUNDERBIRD TECHNOLOGIES, INC. |
发明人 |
DENNEN, MICHAEL WILLIAM |
分类号 |
H01L29/78;H01L21/265;H01L21/335;H01L21/336;H01L29/08;H01L29/10 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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