发明名称 |
Flash memory cell and method for manufacturing the same |
摘要 |
An active region and a trench region are formed on a semiconductor substrate. The trench region is filled with a dielectric material to form an isolation layer. Oxide and polysilicon layers are formed on the semiconductor substrate. A second polysilicon layer, a second oxide layer, and a first polysilicon layer are patterned to form a plurality of gate lines. Deep ion implantation in a deep portion of the active region is performed using a self-aligned source mask. The active region and the trench region are exposed through the self-aligned source mask by etching the isolation layer between the plurality of gate lines using the self-aligned source mask to form a common source region. Ions are implanted in the common source region using the self-aligned source mask.
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申请公布号 |
US7253056(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20050315148 |
申请日期 |
2005.12.23 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM JUM SOO;YUNE JI HYUNG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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