发明名称 |
Active matrix display device with active element including a semiconductor film formed of an aggregate of single crystals each extending in the same direction |
摘要 |
A laser beam is selectively directed to an amorphous silicon film of a pixel portion on an active-matrix substrate of a display device to modify the amorphous silicon film into a polysilicon film. Pixel circuits such as thin film transistors are formed on the modified polysilicon film. Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.
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申请公布号 |
US7253864(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20050246225 |
申请日期 |
2005.10.11 |
申请人 |
HITACHI, LTD. |
发明人 |
KIKUCHI HIROSHI;HONGO MIKIO;HATANO MUTSUKO;OHKURA MAKOTO |
分类号 |
G02F1/136;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L27/12;H01L29/04 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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