发明名称 |
Multilevel phase-change memory element and operating method |
摘要 |
A multilevel phase change memory element and operating method and electrodes, which are configured in a parallel structure to form a memory cell. A voltage-drive mode is employed to control and drive the memory element such that multilevel memory states may be achieved by imposing different voltage levels. The provided multilevel phase-change memory element has more bits and higher capacity than that of a memory element with a single phase-change layer.
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申请公布号 |
US7254059(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20050182783 |
申请日期 |
2005.07.18 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUT |
发明人 |
LI CHIEN-MING;WANG WEN-HAN;SHEN KUEI-HUNG |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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