SEMICONDUCTOR DEVICE HAVING STEP-SHAPED GATE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to restrain the failure of the device due to the misalignment of a contact hole by keeping a sufficient distance between adjacent gates using an improved gate structure with a stepped portion. A semiconductor device includes a first layer(510) with a first and a second transistors(110,120) adjacently arranged to each other and a second layer(520) with a third transistor(130) connected with the first transistor. The second layer is located on the first layer. The first and third transistors are connected with each other through a contact hole(410). The contact hole is capable of connecting a first gate(112) of the first transistor with a third gate(132) of the third transistor. A first end portion of a second gate(122) of the second transistor is adjacent to the first transistor. The thickness of the first end portion of the second gate is in a range of 1/10 to 3/4 of that of the first gate. The height of the first end portion of the second gate is lower than an upper surface of the first gate.