发明名称 Apparatus and method for feature edge detection in semiconductor processing
摘要 A system for identifying a mark or other recess formed in a substrate and at least partially covered by at least one layer of opaque or visibly opaque material. The system includes a radiation source configured and positioned to direct incident electromagnetic radiation of at least one wavelength toward the substrate, a reflectometer positioned so as to receive electromagnetic radiation reflected from a location of the substrate, and at least one processor associated with the reflectometer for analyzing an intensity of electromagnetic radiation of each wavelength of radiation reflected from the substrate. The radiation source may direct incident radiation including a range of wavelengths toward a substrate. The system may also include a processor programmed to effect the storage of locations where a measured intensity of one or more wavelengths of radiation reflected from the substrate vary from a baseline intensity of the same wavelength or wavelengths of radiation reflected from a substantially planar location of the same substrate, as well as processors that are programmed to map these locations and to characterize or identify a mark or recess based on such mapping. A method of identifying a mark or other recess formed in a substrate is also disclosed.
申请公布号 US7253428(B1) 申请公布日期 2007.08.07
申请号 US20000542782 申请日期 2000.04.04
申请人 MICRON TECHNOLOGY, INC. 发明人 LITTLE JOSEPH R.
分类号 G01V8/00 主分类号 G01V8/00
代理机构 代理人
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