INNER SOURCE VOLTAGE GENERATING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

An internal voltage generating circuit of a semiconductor memory device is provided to prevent the decrease of operation speed according to the operation state of the semiconductor memory device, by changing pulse width generating an internal power supply voltage according to an operation mode of the semiconductor memory device. A variable pulse generation circuit(100) generates a pulse signal with pulse width varying according to an input command. A voltage generation circuit generates an internal voltage in response to the pulse signal. The width of the pulse signal varies according to the number of enabled word lines, through a delay circuit.