发明名称 |
Semiconductor memory device for improving response margin of redundancy flag signal and redundancy driving method for the same |
摘要 |
A burst mode compatible semiconductor memory device having a redundancy memory adapted to repair a normal memory is disclosed. Response margin for a redundancy flag signal and redundancy driving method is improved by sensing generation of an internal address corresponding to an embedded address, and generating a redundancy flag signal, such that the embedded address is an address preceding the address of the memory cell of the normal cell array to be repaired by at least one clock.
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申请公布号 |
US7254076(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20050317303 |
申请日期 |
2005.12.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHAE DONG HYUK;LIM YOUNG HO |
分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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