发明名称 |
Method and apparatus for forming a barrier metal layer in semiconductor devices |
摘要 |
A method and apparatus for forming a barrier metal layer in semiconductor devices are disclosed. A disclosed method for forming a barrier metal layer in a semiconductor device forms an interlayer insulating layer on a front face of a semiconductor substrate having a contact area and patterns the interlayer insulating layer to open the contact area. The disclosed method further places the semiconductor substrate in a chamber, injects reactant gas and precursor into the chamber, transforms the gas into plasma gas and causes the plasma gas to react with the precursor to form a single TiSiN film covering the contact area.
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申请公布号 |
US7253110(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20030701341 |
申请日期 |
2003.11.04 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KO SANGTAE |
分类号 |
H01L21/44;H01L21/28;H01L21/285;H01L21/3205;H01L21/4763;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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