发明名称 |
Method for manufacturing silicon-on-insulator wafer |
摘要 |
A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250° C. to 800° C. to transfer the SOI wafer to an atmosphere containing hydrogen or water. The steps are performed in that order.
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申请公布号 |
US7253069(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20050101870 |
申请日期 |
2005.04.08 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORPORATION |
发明人 |
MURAKAMI YOSHIO;YAMAZAKI TORU;AOKI YOSHIRO;ENDO AKIHIKO |
分类号 |
H01L21/331;H01L27/12;H01L21/02;H01L21/425;H01L21/762;H01L21/8222 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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