LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A light emitting device and its manufacturing method are provided to enhance electrical properties and light emissive characteristics, to reduce the concentration of a P type dopant and to secure a sufficient amount of activated Mg by using a P type clad layer with a reduced amount of Mg-H complex. A light emitting device includes an N type semiconductor layer, an active layer, a P type clad layer, an undoped semiconductor layer, and a P type semiconductor layer. The N type semiconductor layer(30) is formed on a substrate. The active layer(40) is formed on the N type semiconductor layer. The P type clad layer(50) is formed on the active layer. The undoped semiconductor layer(60) is formed on the P type clad layer. The P type semiconductor layer(70) is formed on the undoped semiconductor layer. The undoped semiconductor layer is made of the same material as that of the P type semiconductor layer. The P type clad layer is made of AlGaN. The undoped semiconductor layer and the P type semiconductor layer are made of GaN.