METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to control effectively off-current of a cell transistor by increasing a work function of a gate electrode. A gate insulating layer(102) and a polysilicon layer doped with a P type impurity are formed on a substrate(100) including a cell area having a pin type active area and a peri/core area including a flat type active area. A photoresist pattern for exposing an NMOS transistor region of the peri/core area is formed on the polysilicon layer doped with the P type impurity. The exposed polysilicon layer is converted to an N type impurity-doped polysilicon layer by counter-doping an N type impurity on the polysilicon layer. A first polysilicon pattern(110) doped with the P type impurity, a second polysilicon pattern(112) doped with the P type impurity, and a third polysilicon pattern(114) doped with the N type impurity are formed by patterning the polysilicon layer doped with the P type impurity and the N type impurity. Source/drains are formed at both sides of the first to the third polysilicon patterns.