发明名称 ELECTRON EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 An electron emission device and a method for manufacturing the same are provided to increase current density and to perform a low-voltage driving operation by improving electron emission characteristics of an electron emission source. A cathode electrode having a predetermined illuminance and a surface winding is arranged on a base substrate(110). A gate electrode(140) is electrically insulated from the cathode electrode. A first insulating layer(130) is arranged between the cathode electrode and the gate electrode in order to insulate electrically. An electron emission source hole is formed at the first insulating layer and the gate electrode in order to expose a part of the cathode electrode. An electron emission source is positioned in the electron emission source hole in order to be electrically connected to the cathode electrode. The electron emission source includes a catalytic layer(251) formed along the surface winding of the cathode electrode and an electron emission material(252) grown on the catalytic layer.
申请公布号 KR20070079251(A) 申请公布日期 2007.08.06
申请号 KR20060009819 申请日期 2006.02.01
申请人 SAMSUNG SDI CO., LTD. 发明人 JEONG, KWANG SEOK
分类号 H01J1/30 主分类号 H01J1/30
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