RECEIVER CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS
摘要
A receiver circuit of a semiconductor memory device is provided to reduce the characteristic degradation of the receiver circuit by generating a compensation signal compensating an offset voltage according to the variation of process, voltage and temperature using a current converted from input data. An offset control signal generation unit(300) outputs a plurality of offset control signals. A sense amplifier(400) receives an up input signal and a down input signal converted into a current, and outputs an up output signal and a down output signal by amplifying an up compensation signal and a down compensation signal by converting the current into the up and down compensation signals having a potential compensating an offset voltage. A latch unit(200) outputs data by latching the up and down output signals.
申请公布号
KR100748462(B1)
申请公布日期
2007.08.06
申请号
KR20060088745
申请日期
2006.09.13
申请人
HYNIX SEMICONDUCTOR INC.
发明人
HWANG, TAE JIN;PARK, KUN WOO;KIM, YONG JU;KIM, JONG WOON;SONG, HEE WOONG;OH, IC SU;KIM, HYUNG SOO