发明名称 TEST MODE OPERATING CIRCUIT OF SEMICONDUCTOR MEMORY
摘要 A test mode operating circuit of a semiconductor memory is provided to prevent a test mode operation error due to glitch by using a test mode enable signal. A glitch prevention part(300) receives a test mode enable signal and a test mode signal as inputs. A signal input part(400) receives an operation signal and a test mode input signal output from the glitch prevention part. A latch part(500) latches a signal output from the signal input part. The glitch prevention part includes a NAND gate(ND1) receiving the test mode enable signal and the test mode signal and an inverter unit(IV41) inverting a signal output from the NAND gate.
申请公布号 KR20070079109(A) 申请公布日期 2007.08.06
申请号 KR20060009516 申请日期 2006.02.01
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, TAE KYUN;YOU, MIN YOUNG
分类号 G11C29/00 主分类号 G11C29/00
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