发明名称 |
TEST MODE OPERATING CIRCUIT OF SEMICONDUCTOR MEMORY |
摘要 |
A test mode operating circuit of a semiconductor memory is provided to prevent a test mode operation error due to glitch by using a test mode enable signal. A glitch prevention part(300) receives a test mode enable signal and a test mode signal as inputs. A signal input part(400) receives an operation signal and a test mode input signal output from the glitch prevention part. A latch part(500) latches a signal output from the signal input part. The glitch prevention part includes a NAND gate(ND1) receiving the test mode enable signal and the test mode signal and an inverter unit(IV41) inverting a signal output from the NAND gate.
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申请公布号 |
KR20070079109(A) |
申请公布日期 |
2007.08.06 |
申请号 |
KR20060009516 |
申请日期 |
2006.02.01 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, TAE KYUN;YOU, MIN YOUNG |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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主权项 |
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