| 摘要 |
<p>A MLC(Multi-Level Cell) non-volatile memory device and its fabrication method are provided to reduce a total area thereof by using two kinds of fullerene materials having different electron affinities. A source region, a drain region, and a channel region are formed on a semiconductor substrate(30). A tunneling oxide layer(41) is formed on the channel region of the semiconductor substrate. A floating gate(44) is formed on the tunneling oxide layer. The floating gate is formed with a plurality of fullerene materials having different electron affinities. A blocking oxide layer(46) is formed on the floating gate. A gate electrode(48) is formed on the blocking oxide layer. The fullerene materials are selected from a group including carbon-based materials of C60, C70, C74, C76, C78, C84, and endohedral metallofullerene materials as the carbon-based material including metal atoms.</p> |
