| 摘要 |
A method for manufacturing a flash memory device is provided to secure the effective length of a channel by performing an N-type heavily doped ion implantation process after an N-type or a P-type lightly-doped ion implantation process. A gate is formed on a semiconductor substrate(100). An oxide layer is formed on a lateral surface of the gate by a re-oxidation process. A first junction part(116) is formed within the semiconductor substrate by a lightly-doped ion implantation process. A spacer(118) is formed on a lateral surface of the oxide layer. A second junction part(120) is formed within the semiconductor substrate by a heavily-doped ion implantation process. The lightly-doped ion implantation process includes a process for implanting N-type or P-type ions.
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