| 摘要 |
A semiconductor memory device is provided to selectively detect plural data by selectively enabling column selection signals in a column decoder, thereby selectively detecting defects of a portion of a memory cell in a page. A semiconductor memory device is composed of a memory cell array(10) comprising a plurality of memory cells; a BIST(Built-In Self Test) circuit(60) for writing test pattern data including 0 and 1 in the memory cells for every page and testing plural memory cells; a sensor amplifier(2) for holding plural data read from plural memory cells at every page; and a detection circuit(1) for collectively detecting plural data kept in the sensor amplifier by a unit of page or byte and outputting the detection result to the BIST circuit.
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