POLISHING LIQUID FOR BARRIER LAYER

摘要

Provided is a polishing solution which is used to polish the battier layer of a semiconductor integrated circuit with inhibiting the erosion of a wafer and the generation of scratch. The polishing solution comprises a colloidal silica of which a part of the surface is coated with aluminum; and an oxidizing agent, and has a pH of 2-7. Optionally the polishing solution comprises further an alkyl quaternary ammonium compound; an anionic surfactant; and/or an organic acid containing a carboxyl group. Preferably the colloidal silica has a primary particle size of 10-60 nm and has a concentration of 1-15 wt% based on the weight of the polishing solution.