FIN FIELD EFFECT TRANSISTOR HAIVING LOW LEAKAGE CURRENT AND METHOD OF MANUFACTURING THE FINFET

摘要

A fin FET(Field Effect Transistor) and its manufacturing method are provided to minimize the generation of leakage current in an off state and to enhance the degree of integration. A wall type body(420) is formed by patterning a bulk silicon substrate. An insulating layer is formed to a first height of the wall type body. A gate insulating layer(460) is formed at sidewalls and upper surface of the wall type body. A gate electrode structure composed of first and second gate electrodes(470,480) is formed on the gate insulating layer and the insulating layer. The gate electrode structure is formed vertical to the length direction of the wall type body. Source/drain regions(490,492) are formed in the wall type body to align the gate electrode structure. The work function of the second gate electrode is lower than that of the first gate electrode.