| 摘要 |
A silicon wafer and a manufacturing method thereof are provided to depress generation of oxygen donors during heat treatment of a device by ensuring oxygen precipitation induced defects to have a density sufficient for gettering. A silicon wafer for a high frequency diode having a P type region, an N type region, and a high frequency layer interposed between the P type region and the N type region includes a carbon concentration of 5*10^15 to 5*10^17 atoms/cm^3, an interstitial oxygen concentration of 6.5*10^17 to 13.5*10^17 atoms/cm^3, and resistivity of 100 Фcm or more. The silicon wafer is produced by forming the P type region in one side and the N type region in the other side of the silicon wafer. Oxygen precipitation induced defects generated in the silicon wafer have a role of recombination centers in the high resistivity layer.
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