| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that reduces an amount of warpage of a semiconductor wafer due to a heat treatment of the semiconductor wafer. SOLUTION: The method for manufacturing the semiconductor device having a back electrode includes a stage of preparing the semiconductor wafer having a top surface and a reverse surface, a heat-treating stage of forming a first metal layer on the reverse surface of the semiconductor wafer and forming ohmic bonding between the semiconductor wafer and first metal layer through the heat treatment, and a stage of forming a second metal layer of Ni on the reverse surface of the semiconductor substrate after the heat treatment. COPYRIGHT: (C)2007,JPO&INPIT |
