发明名称 DISTRIBUTED WRITING METHOD FOR FLASH MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a distributed writing method for a flash memory, extending a service life of the flash memory. SOLUTION: A physical area of the flash memory is divided into a first area and a second area. The first area is a logical area including data and a plurality of auxiliary areas, and the second area is an area not including data, and is used for writing. When writing data, a scheduled auxiliary area is selected from the auxiliary areas of the first area, a physical block is selected from inside the other non-scheduled auxiliary areas, and a physical block is selected from the second area 2 and is set as a physical block for the writing. When a writing frequency becomes a multiple of a scheduled value, the physical block for the writing is replaced with another physical block and is set as the second area to perform writing to the physical block, the data of the physical block selected inside the first area are written in the physical block of the second area, the physical block selected from the first area is moved to the second area, and the physical block already written with the data of the second area is moved to the first area to distribute the writing frequency of each block. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007193618(A) 申请公布日期 2007.08.02
申请号 JP20060011777 申请日期 2006.01.19
申请人 PHISON ELECTRONICS CORP 发明人 SHU KENKA
分类号 G06F12/16;G06F12/00;G06F12/02 主分类号 G06F12/16
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