| 摘要 |
An exposure method of forming a three-dimensional lithographic pattern is provided. The method includes providing a substrate. A first photoresist layer is formed on the substrate. The first photoresist layer corresponds to a first exposure removal dose. A second photoresist layer is formed on the first photoresist layer. The second photoresist layer corresponds to a second exposure removal dose different from the first exposure removal dose. Through a first reticle, the first and second photoresist layers are exposed with a first exposure energy, which is in a range between the first exposure removal dose and the second exposure removal dose, so as to form a first removable region. Through a second reticle, the first and second photoresist layers are exposed with a second exposure energy, which is substantially equal to or higher than the higher one of the first exposure removal dose and the second exposure removal does, so as to form a second removable region different from the first removable region.
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