Semiconductive device fabricated using a two step approach to silicide a gate and source/drains

摘要

In one aspect, the invention provides a method of fabricating a semiconductive device [ 200] , comprising siliciding a gate [ 340] with a first silicidation layer [ 710] , removing a protective layer [ 510] to expose source/drains [ 415] , and siliciding the gate [ 340] and the source/drains [ 415] with a second silicidation layer.