| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device advantageous to the prevention of the generation of incorrect writing caused by overheating by current passage, and also the prevention of the degradation of writing speed. <P>SOLUTION: The semiconductor memory device comprises a wiring BL for a first writing provided along a first direction; a first memory device MC1 connected to the wiring for the first writing; a second memory device MC2 which is formed so as to adjoin the first memory cell along the first direction and connected to the wiring for the first writing; and a second insulating film 20-2 which is provided between the first insulating films 22-1 and 22-2 formed on each surface of the first and second memory devices and the first and second adjoining memory devices, wherein thermal conductivity is lower than that of the first insulating film (κ2<κ1). <P>COPYRIGHT: (C)2007,JPO&INPIT |
