发明名称 METHOD FOR PRODUCING HIGH PURITY SiC FINE POWDER
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a high purity SiC fine powder in which few adhesion particles formed by the secondary bonding of powdery particles are contained and which is especially excellent in mono-spherical property suitable as a sintering raw material. <P>SOLUTION: The method for producing the high purity SiC fine powder comprises: adding phenols, formaldehyde, and an aqueous ammonia solution into a silica sol or a silica suspension containing silica fine particles prepared from a silicon alkoxide and each having a particle diameter of 10-2,000 nm to polymerize the phenols and formaldehyde to form an SiC precursor having such a core-shell structure that the periphery of each silica fine particle being a nucleus is covered with a phenol resin; firing the SiC precursor by heat treating it at 800-1,000&deg;C in an oxygen-free atmosphere; and then silicifying it at 1,400-2,200&deg;C in an inert atmosphere. Further, it is preferable that the volume ratio of the phenol resin to silica fine particles constituting the SiC precursor is 33-500%. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007191364(A) 申请公布日期 2007.08.02
申请号 JP20060012432 申请日期 2006.01.20
申请人 TOKAI CARBON CO LTD 发明人 ITO KATSUKI;SUDA SEIICHI
分类号 C01B31/36 主分类号 C01B31/36
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