发明名称 SURFACE ACOUSTIC WAVE ELEMENT AND METHOD OF MANUFACTURING SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a surface acoustic wave element which is easily made small-sized and thin and is easy to package and has a high reliability. <P>SOLUTION: The method of a surface acoustic wave element 10 having comb-shaped IDT electrodes 60 formed on a surface of a semiconductor substrate 20, includes steps of; forming insulating layers 21 to 23 on an active side surface of the semiconductor substrate 20; forming a base layer 30 throughout a surface of the insulating layer 23; flattening a surface of the base layer 30; forming a piezoelectric material 51 on the flattened surface of the base layer 30; forming IDT electrodes 60 on a surface of the piezoelectric material 51; and forming a bank 41 which is higher than a height from the surface of the base layer 30 to surfaces of IDT electrodes 60 and surrounds the piezoelectric material 51 and the IDT electrodes 60, on a surface peripheral edge part of the base layer 30. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007194999(A) 申请公布日期 2007.08.02
申请号 JP20060012058 申请日期 2006.01.20
申请人 SEIKO EPSON CORP 发明人 YAJIMA ARITSUGU;HIGUCHI AMAMITSU;KASUYA YOSHIKAZU
分类号 H03H3/08;H01L41/09;H01L41/187;H01L41/22;H01L41/23;H03H9/25 主分类号 H03H3/08
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