| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transparent substrate type AlGaInP group light emitting element having high luminance and stable yield. <P>SOLUTION: The transparent substrate type light emitting diode comprises a light emitter including a light emitting layer composed of a composition formula (Al<SB>X</SB>Ga<SB>1-X</SB>)<SB>Y</SB>In<SB>1-Y</SB>P (0≤X≤1, 0<Y≤1), an ohmic contact formation layer formed on the light emitter and composed of GaP, a transparent substrate joined with the surface of the ohmic contact formation layer, and first and second electrodes formed on the same surface side and having respectively different polarities. A surface on which the second electrode of the ohmic contact formation layer of the diode is a crystal surface inclined in a direction for exposing a (111)A surface from a (100) surface. <P>COPYRIGHT: (C)2007,JPO&INPIT |
