| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor element, which can suppress deterioration in light-emitting efficiency due to bonding of Al. <P>SOLUTION: The method of manufacturing a nitride semiconductor element includes a step of forming at least one or more n-type semiconductor layers on a substrate, a step of forming an active layer on the n-type semiconductor layers, a step of supplying Al onto the active layer in a condition in which the flow rate of N<SB>2</SB>is larger than that of H<SB>2</SB>as a carrier gas to form a p-type AlGaN layer, a step of stopping the supply of only Al in the same condition as that of forming the p-type AlGaN layer to form a first p-type GaN layer on the p-type AlGaN layer, and a step of forming a second p-type GaN layer on the first p-type GaN layer in condition in which the flow rate of N<SB>2</SB>is smaller than that of H<SB>2</SB>as a carrier gas. <P>COPYRIGHT: (C)2007,JPO&INPIT |
