| 摘要 |
PROBLEM TO BE SOLVED: To provide a dividing method for a wafer in which the wafer having dividing lines on a surface in a lattice shape can precisely be divided along the dividing lines. SOLUTION: In the dividing method for the wafer, the wafer having a plurality of first dividing lines and a plurality of second dividing lines formed crossing each other is divided into individual chips along the first dividing lines and second dividing lines. The dividing method includes a first deterioration layer forming stage of forming deterioration layers by irradiating the inside of the wafer with a laser beam along the first dividing lines, a first dividing stage of applying an external force to the wafer along the first dividing lines to break the wafer into strips along the first dividing lines where the deterioration layers are formed, a second deterioration layer forming stage of forming deterioration layers by irradiating the inside of the wafer with a laser beam along the second dividing lines, and a second dividing stage of applying an external force to the stripped wafers along the second dividing lines to break the wafers into individual chips along the second dividing lines where the deterioration layers. COPYRIGHT: (C)2007,JPO&INPIT |
