| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiO<SB>2</SB>-based film formation composition that is easy to peel a protection film after the diffusion of impurities and has superior protection effect. SOLUTION: The film formation composition is used to form a protection film to partially prevent the diffusion of impurities when the impurities are diffused to a silicon wafer, and it contains a high molecular silicon compound and a compound including a protective element that has eight valency electrons after the covalent bonding with an element as a diffusion source for the impurity diffusion. The protective element is preferably gallium or aluminum when phosphorous is used as a diffusion source; and is preferably tantalum, niobium, arsenic, or antimony in case when boron is used. COPYRIGHT: (C)2007,JPO&INPIT |
