发明名称 SEMICONDUCTOR LASER WITH SIDE MODE SUPPRESSION
摘要 Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.
申请公布号 WO2006004835(A3) 申请公布日期 2007.08.02
申请号 WO2005US23102 申请日期 2005.06.30
申请人 FINISAR CORPORATION;RATOWSKY, RICHARD, P.;VERMA, ASHISH, K.;ENG, LARS 发明人 RATOWSKY, RICHARD, P.;VERMA, ASHISH, K.;ENG, LARS
分类号 H01S3/098;H01S5/00 主分类号 H01S3/098
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