发明名称 |
GaN bulk growth by Ga vapor transport |
摘要 |
GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert gas is N<SUB>2</SUB>, and the powder source is GaN powder that is loaded into source chambers. The GaN powder is congruently evaporated into Ga and N<SUB>2 </SUB>vapors at temperatures between approximately 1000 and 1200° C. The formation of Ga liquid in the powder is suppressed by the purging of an inert gas through the powder. The poser may also be isolated from a nitride containing gas provided at the growth cite. In one embodiment, the inert gas is flowed through the powder. |
申请公布号 |
US2007178671(A1) |
申请公布日期 |
2007.08.02 |
申请号 |
US20060541919 |
申请日期 |
2006.10.02 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC |
发明人 |
SPENCER MICHAEL G.;KONKAPAKA PHANI;WU HUAQIANG;MAKAROV YURI |
分类号 |
H01L21/20;C30B23/00;C30B29/40;H01L21/36;H01L31/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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