| 摘要 |
PROBLEM TO BE SOLVED: To provide a sensor element and a wafer level package structure by which a manufacturing process can be simplified, a process temperature can be lowered, and a yield of a bonding process can be improved. SOLUTION: A wafer level package structure 100 is constituted by directly bonding bonded metal layers 18, 28 for seal and bonded metal layers 19, 29 for connection, respectively. The structure comprises a sensor wafer 10 obtained by forming a plurality of sensor substrates (sensor main bodies) 1, and a first package wafer 20 obtained by forming a plurality of through-hole wiring formation substrates (substrate parts for first package) 2. Film thicknesses of each Au film for seal of the bonded metal layers 18, 28 for seal and each Au film for connection of the bonded metal layers 19, 29 for connection are set to 500 nm or less. A sensor element is formed by dividing the wafer level package structure 100 into a desired size defined based on a size of the sensor substrate 1. COPYRIGHT: (C)2007,JPO&INPIT
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