METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING PLATING ENHANCEMENT LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor structure having a plating enhancement layer. SOLUTION: There is disclosed a method of manufacturing a semiconductor structure comprising: a step for forming an interlayer dielectric (ILD) layer on a semiconductor layer; a step for forming a conductive plating enhancement layer (PEL) on the ILD layer; a step for patterning the ILD and the PEL; a step for depositing a seed layer in the pattern that is formed by the ILD and the PEL; and a step for plating the top of the seed layer with copper. The PEL reduces resistance over an entire wafer, and functions to facilitate copper plating. The PEL is preferably an optically transparent conductive layer. COPYRIGHT: (C)2007,JPO&INPIT