| 摘要 |
PROBLEM TO BE SOLVED: To provide a modifying method for a ferroelectric thin film according to which method a carbon element is removed from the ferroelectric thin film and the ferroelectric thin film as a whole is baked to be improved in density to prevent the occurrence of fracture, and to improve film density to offer higher dielectric constant and higher electric characteristics. SOLUTION: The modifying method for the ferroelectric thin film is used to carry out a modifying process of modifying the ferroelectric thin film that is formed on the surface of a workpiece using an organic metal compound material. The modifying process includes a modifying step of causing an ultraviolet lamp 58 to emit ultraviolet light onto the ferroelectric thin film formed on the surface of a wafer W in an inert gas atmosphere, as the workpiece is kept at a prescribed temperature to reform the ferroelectric thin film. Through this step, a carbon element is removed from the ferroelectric thin film, and the ferroelectric thin film as a whole is baked to be improved in density to prevent the occurrence of fracture and to improve film density to offer higher dielectric constant and higher electric characteristics. COPYRIGHT: (C)2007,JPO&INPIT
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