| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, wherein a resistance of a conductive layer in a compound semiconductor layer can be reduced or a leakage current can be restrained between the compound semiconductor layer and an insulating film. SOLUTION: This method for manufacturing the semiconductor device contains the steps of forming a silicon nitride film (26) having a refractive index of 1.85 or less on a compound semiconductor layer (20) containing Ga by a plasma CVD method, and selectively processing the compound semiconductor layer by using the silicon nitride film as a mask. COPYRIGHT: (C)2007,JPO&INPIT
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