Method for production of semiconductor components, particularly etching processes to form ditches and via holes in dielectric material for production of metalization layers, involves corroding substrate in corroding atmosphere

摘要

The methods involves corroding a substrate in a corroding atmosphere, in order to form a structural component over the former substrate, where the corroding atmosphere is equipped by supplying a gaseous component. A supply of gaseous component is controlled on the basis of a measured value of a characteristic of the structural component on the former substrate, if another substrate is corroded in another corroding atmosphere, in order to form a structural component over the later substrate. An independent claim is also included for a control system, which has a control section.