METHODS OF IMPLANTING IONS AND ION SOURCES USED FOR SAME

摘要

A method of implanting ions comprising generating C<SUB>2</SUB>B<SUB>10</SUB>H<SUB>x </SUB>ions from C<SUB>2</SUB>B<SUB>10</SUB>H<SUB>12</SUB> and implanting the C<SUB>2</SUB>B<SUB>10</SUB>H<SUB>x</SUB> ions in a material. In some embodiments, the molecular weight of the C<SUB>2</SUB>B<SUB>10</SUB>H<SUB>x</SUB> ions is greater than 100 amu. .In other embodiments, the molecular weight of the C<SUB>2</SUB>B<SUB>10</SUB>H<SUB>x</SUB> ions is approximately 132 to 144 amu or approximately 136 to 138 amu. An ion source is also disclosed comprising a chamber housing defining a chamber and a source feed gas supply configured to introduce C<SUB>2</SUB>B<SUB>10</SUB>H<SUB>12</SUB> into the chamber, wherein the ion source is configured to ionize the source feed gas within the chamber into C<SUB>2</SUB>B<SUB>10</SUB>H<SUB>x</SUB> ions.